型号:

UP1B-1R0-R

RoHS:无铅 / 符合
制造商:Cooper Bussmann描述:INDUCTOR POWER 1.0UH 4.4A SMD
详细参数
数值
产品分类 电感器,线圈,扼流圈 >> 固定式
UP1B-1R0-R PDF
产品目录绘图 UP1B, 2B, 3B, 4B Series Pin Out
UP1B Series
标准包装 1
系列 UNI-PAC™
电感 1µH
电流 4.4A
电流 - 饱和 5.3A
电流 - 温升 -
类型 铁氧体芯体
容差 ±20%
屏蔽 无屏蔽
DC 电阻(DCR) 最大 17.7 毫欧
Q因子@频率 -
频率 - 自谐振 -
材料 - 芯体 铁氧体
封装/外壳 0.350" L x 0.240" W x 0.196" H(8.89mm x 6.10mm x 5.00mm)
安装类型 表面贴装
包装 剪切带 (CT)
工作温度 -40°C ~ 85°C
频率 - 测试 100kHz
产品目录页面 1741 (CN2011-ZH PDF)
其它名称 513-1181-1
相关参数
IDT71V416VS12PHG IDT, Integrated Device Technology Inc IC SRAM 4MBIT 12NS 44TSOP
LP5900TL-2.1/NOPB National Semiconductor IC REG LDO 2.1V .15A 4-USMD
MLF2012C330K TDK Corporation INDUCTOR MULTILAYER 33UH 0805
UP1B-1R0-R Cooper Bussmann INDUCTOR POWER 1UH 4.4A SMD
IDT71V416VS12PH8 IDT, Integrated Device Technology Inc IC SRAM 4MBIT 12NS 44TSOP
LP5952LC-1.3/NOPB National Semiconductor IC REG LDO 1.3V .35A 6-LLP
MLF2012C330K TDK Corporation INDUCTOR MULTILAYER 33UH 0805
LP5952LC-1.3/NOPB National Semiconductor IC REG LDO 1.3V .35A 6-LLP
LC75836W-E ON Semiconductor IC LCD DISPLAY DRIVER 48SQFP
IDT71V416VS12PH IDT, Integrated Device Technology Inc IC SRAM 4MBIT 12NS 44TSOP
MLF2012A2R7K TDK Corporation INDUCTOR MULTILAYER 2.7UH 0805
T95R227K016CSAS Vishay Sprague CAP TANT 220UF 16V 10% 2824
LP5952LC-1.3/NOPB National Semiconductor IC REG LDO 1.3V .35A 6-LLP
IDT71V416VS12BEI8 IDT, Integrated Device Technology Inc IC SRAM 4MBIT 12NS 48BGA
GCM08DRAN Sullins Connector Solutions CONN EDGECARD 16POS R/A .156 SLD
LP5996SDX-2533/NOPB National Semiconductor IC REG LDO 2.5V/3.3V 10LLP
IDT71V416VS12BEI IDT, Integrated Device Technology Inc IC SRAM 4MBIT 12NS 48BGA
MLF2012A2R7K TDK Corporation INDUCTOR MULTILAYER 2.7UH 0805
UP1B-100-R Cooper Bussmann INDUCTOR POWER 10UH 1.5A SMD
IDT71V416VS12BE8 IDT, Integrated Device Technology Inc IC SRAM 4MBIT 12NS 48BGA